Bulk Damage Effects in Irradiated Silicon Detectors due to Clustered Divacancies

High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider where the enormous particle fluences give rise to significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations during irradiation and their electrical behaviour according to Shockley-Read-Hall (SRH) semiconductor statistics. The observed increases in leakage current and doping concentration changes can be described well after gamma irradiation but less well after fast neutron irradiation. A possible non-SRH mechanism is considered, based on the hypothesis of charge transfer between clustered divacancy defects in neutron damaged silicon detectors. This leads to a large enhancement over the SRH prediction for V2 acceptor state occupancy and carrier generation rate which may resolve the discrepancy

Attraction between DNA molecules mediated by multivalent ions

The effective force between two parallel DNA molecules is calculated as a function of their mutual separation for different valencies of counter- and salt ions and different salt concentrations. Computer simulations of the primitive model are used and the shape of the DNA molecules is accurately modelled using different geometrical shapes. We find that multivalent ions induce a significant attraction between the DNA molecules whose strength can be tuned by the averaged valency of the ions. The physical origin of the attraction is traced back either to electrostatics or to entropic contributions. For multivalent counter- and monovalent salt ions, we find a salt-induced stabilization effect: the force is first attractive but gets repulsive for increasing salt concentration. Furthermore, we show that the multivalent-ion-induced attraction does not necessarily correlate with DNA overcharging.Comment: 51 pages and 13 figure